The Study of A Novel Second-order Stress Isolation for Silicon Resonator Applied on MEMS Sensor

摘要

This paper studied the stress distribution and resonant frequency variation of the Micro Electro Mechanical System (MEMS) resonator when temperature varies. To address this problem, a novel second-order stress isolation frame had been proposed. By finite element analysis and the tests of three kind of prototypes, it was verified that the second-order stress isolation frame showed a good adaptability of the ambient temperature, and its temperature coefficient of frequency (TCf) was reduced from -1011ppm/°C to -99.5 ppm/°C. However, this kind of frame damaged the sensitivity of device to a certain extent.