Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS

摘要

Properties of SiC/Si bonding interface made by surface activated bonding are studied by X-ray photoelectron spectroscopy of the SiC surface that are unveiled by removing Si substrates of SiC/Si junctions. By fitting the XPS spectra, we found that the annealing of junctions brings about the shift in binding energy of Si-C bonding, which is in correlation with the reverse-bias current of SiC/Si heterojunction. The change in the binding energy is assumed to be attributed to the shift of Fermi level at the SiC surface due to the annealing.