Computational Design of Multilayer High-Speed MTJ MRAM by Using Quantum-Cellular-Automata Technique

摘要

An "MTJ MRAM" is a non-volatile memory design which is more acceptable memory design to reduce the power leakage than other random-access memories. The bit-wise word line operation of this memory-circuit can be represented through "CMOS" technique. But, to get better scalability word line delay and power-leakage reduction the previous technique should be replaced by using 3-D quantum-cell technology word line reversibility. This paper presents a multilayer structure of a "MTJ MRAM" by using "Fredkin" gate and reversible "NAND". This design is compared with "45 nm CMOS technology" and also the synthesized-outcome of "Xilinx-Software" using "VHDL" code. The synthesized schematic-figures of the proposed RAM circuit are also presented here.