MRAM MTJ TECHNIQUES FOR MRAM MTJ TOP ELECTRODE CONNECTION

摘要

Some embodiments relate to a method for manufacturing a memory device. The present method comprises the steps of: forming a first masking layer disposed on a dielectric layer, wherein the first masking layer exhibits sidewalls defining an opening disposed on a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region; performing a first etching to form a first via opening within the dielectric layer on the MRAM cell, wherein a top electrode via layer is formed on the MRAM cell and the dielectric layer; and performing a first planarization process on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.