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Ultraviolet light-induced terahertz modulation of an indium oxide film

机译:紫外光诱导的氧化铟膜的太赫兹调制

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Active ultraviolet light-induced terahertz modulation of an indium oxide film is investigated. A large absorption modulation of ~66% is achieved upon illumination with a low intensity UV laser (11 mW/cm2). The interaction between indium oxide and a flexible metamaterial structure is investigated owing to the large UV-induced enhancement of photo carriers observed in an indium oxide film. We are able to realize absorption peak shifts of 37 GHz by changing the UV excitation light intensity. We also propose a multi-frequency switch by building a circular metallic split ring resonator whose gaps are filled with silicon, germanium, and indium oxide. In future, a photo-excited tunable multi-frequency metamaterial switch can be realized by irradiating the structure with multi-wavelength laser beam.
机译:研究了有源紫外线诱导的氧化铟膜的太赫兹调制。用低强度紫外激光(11 mW / cm)照射时,可实现〜66%的大吸收调制 2 )。由于在氧化铟膜中观察到大幅度的紫外线诱导的光载流子增强,因此研究了氧化铟与柔性超材料结构之间的相互作用。通过改变紫外线激发光的强度,我们能够实现37 GHz的吸收峰位移。我们还提出了一种通过构建圆形金属开口环谐振器来实现多频开关的方法,该谐振器的间隙填充有硅,锗和氧化铟。将来,通过用多波长激光束照射结构,可以实现光激发可调多频超材料开关。

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