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Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film

机译:氧化铟烧结体,氧化铟透明导电膜和氧化铟透明导电膜的制造方法

摘要

An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mO•cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.
机译:一种含有锆作为添加剂的氧化铟烧结体,其中锆的原子浓度与铟的原子浓度和锆的原子浓度之和的比率在0.5至4%的范围内,相对密度为99.3%或更高,且体电阻为0.5 mO•cm或更小。本发明的目的在于提供一种在可见光区域和红外区域中具有高透射率,且膜电阻率低并且可以控制结晶温度的氧化铟透明导电膜及其制造方法,以及氧化物用于制造这种透明导电膜的烧结体。

著录项

  • 公开/公告号IN2011MN02068A

    专利类型

  • 公开/公告日2012-02-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN2068/MUMNP/2011

  • 发明设计人 IKISAWA MASAKATSU;TAKAMI HIDEO;

    申请日2011-10-03

  • 分类号C23C14/34;C01G25/00;C04B35/01;H01B1/08;C23C14/08;B05D5/12;C04B35/00;C04B35/626;H05K3/06;H01B5/14;H01B13/00;

  • 国家 IN

  • 入库时间 2022-08-21 17:24:02

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