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Optimization of Laser Release Process for Throughput Enhancement of Fan-Out Wafer-Level Packaging

机译:优化激光释放工艺以提高扇出晶圆级包装的产量

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Fan-out wafer-level-packaging (FOWLP) technology has been developed with various advantages, such as smaller form factor, lower cost, and simplified supply chain for heterogeneous integration. There have been several process schemes like chip-first or chip-last FOWLP integration discussed widely in conferences in recent years. One process in all of these process schemes has in common is the use of a temporary carrier for subsequent redistribution layer (RDL) formation, chip stacking and molding processes. Although the separation of a temporary carrier from the reconstituted wafer could be achieved without significant hurdles, there were few studies addressing optimization of carrier separation for throughput enhancement. Thus, this paper is designed to address the needs in optimizing carrier separation process based upon laser ablation technology. Two phases of experiments were designed to select the appropriate laser release layer and define optimal laser settings. The first experiment was used to evaluate correlation of the laser absorption, laser energy, and spot pitch versus completeness of laser ablation. The second experiment included RDL-first FOWLP integration. At first, 300-mm glass carriers (1000 μm thick) with coefficient of thermal expansion of 8 ppm/oC were treated by selected laser release layers. After deposition of 0.05-μm Ti/0.15 μm Cu on the glass carrier, passivation of around 8 μm was coated and patterned by lithography for electroplating Cu interconnections with a density of approximately 10% of the surface area. Subsequently, die bonding, build-up layers, or molding compound were applied on top to form a 200-μm reconstituted wafer. The reconstituted wafer was then separated from the glass carrier through a laser ablation process using a 355-nm laser to determine optimal throughput. Experiments to study correlation of laser release layer with laser settings along with a demonstration of full RDL-first FOWLP integration are discussed thoroughly to address the need of throughput enhancement, which could serve as cornerstone for realizing cost-effective RDL-first FOWLP.
机译:已开发出扇出晶圆级封装(FOWLP)技术,它具有各种优势,例如更小的外形尺寸,更低的成本以及简化的异构集成供应链。近年来,在会议上广泛讨论了诸如芯片优先或芯片末FOWLP集成之类的几种处理方案。所有这些工艺方案中的一个工艺的共同点是使用临时载体进行后续的再分布层(RDL)形成,芯片堆叠和模制工艺。尽管可以在没有明显障碍的情况下从重构晶片上分离出临时载体,但是很少有研究针对提高产量而优化载体分离的研究。因此,本文旨在解决基于激光烧蚀技术优化载流子分离工艺的需求。设计了两个阶段的实验,以选择合适的激光释放层并定义最佳的激光设置。第一个实验用于评估激光吸收,激光能量和光斑间距与激光烧蚀完整性之间的相关性。第二个实验包括RDL-第一个FOWLP集成。首先,300mm的玻璃载体(1000μm厚)的热膨胀系数为8 ppm / o 通过选择的激光释放层处理C。在玻璃载体上沉积0.05-μmTi /0.15μmCu之后,通过光刻法涂覆约8μm的钝化层并进行构图,以电镀铜互连,其密度约为表面积的10%。随后,在其顶部施加管芯键合,堆积层或模塑料,以形成200μm的重构晶片。然后,使用355 nm激光通过激光烧蚀工艺将重构后的晶圆与玻璃载体分离,以确定最佳产量。彻底讨论了研究激光释放层与激光设置的相关性的实验,并演示了完整的RDL-first FOWLP集成,以解决提高吞吐量的需求,这可以作为实现具有成本效益的RDL-first FOWLP的基石。

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