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Chip Stackable, Ultra-thin, High-Flexibility 3D FOWLP (3D SWIFT® Technology) for Hetero-Integrated Advanced 3D WL-SiP

机译:芯片可堆叠,超薄,高灵活性3D FOWLP(3DSWIFT®技术),用于异质集成的高级3D WL-SiP

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Fan-out wafer level packaging (FOWLP) is one of the latest technologies to meet the requirements of high performance and thin form-factor, especially for mobile application processors. To achieve a simple path way and thinner package form, many outsourced semiconductor assembly and test (OSAT) suppliers and foundries provide FOWLP capabilities. Most solutions are limited to the bottom 2D package area with a package on package (PoP) stacking structure to communicate logic to memory or a peripheral chip beyond the 2D distribution area. This means that communication between heterogeneous chips has more power and signal loss by PoP interconnection to reach hetero-chip functions through bulk solder ball joints and printed circuit board (PCB) laminated routing with more coarse trace pattern than a fan-out (FO) redistribution layer (RDL pattern). To improve this situation, high performance heterogeneous integration has been simulated and successfully realized with the novel 3D Silicon Wafer Integrated Fan-out Technology (SWIFT®) prototype as chip stackable, ultra-thin, high flexibility FOWLP for the first ultimate 3D packaging. Also, this has been proven to be a highly flexible and cost-effective structure with a low-risk process flow, low package warpage, stable electrical performance, and good reliability performance. The form-factor of the 3D SWIFT design with various structure options is as much as 45% thinner than PoP technology.
机译:扇出晶圆级封装(FOWLP)是满足高性能和薄型尺寸要求的最新技术之一,特别是对于移动应用处理器。为了实现简单的途径和更薄的封装形式,许多外包的半导体组装和测试(OSAT)供应商和代工厂提供FOWLP功能。大多数解决方案仅限于底部2D封装区域,并且采用PoP堆叠结构将逻辑传递到2D分布区域以外的存储器或外围芯片。这意味着通过PoP互连,异构芯片之间的通信具有更多的功率和信号损耗,从而可以通过散装焊球接头和印刷电路板(PCB)层压布线实现扇形芯片功能,其走线图案比扇出(FO)重新分布更为粗糙层(RDL模式)。为了改善这种情况,已经通过新型3D硅晶圆集成扇出技术(SWIFT®)原型模拟并成功实现了高性能异构集成,该原型是可堆叠,超薄,高灵活性的FOWLP,可用于首个最终3D封装。而且,已经证明这是一种高度灵活且具有成本效益的结构,具有低风险的工艺流程,低的封装翘曲,稳定的电气性能和良好的可靠性能。具有各种结构选项的3D SWIFT设计的外形尺寸比PoP技术薄多达45%。

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