Conformal Doping with High Dopant Concentration for n+/p and p+ Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing

摘要

Flash Lamp Annealing (FLA) is a well-known technique for millisecond annealing. In forming ultra-shallow junctions, FLA can provide high activation levels with precise diffusion control in the nanometer range. Currently, devices with 3D structures require conformal doping as well as diffusion control. Sol-Gel Coating (SGC / Tokyo Ohka Kogyo Co., Ltd.) has a special feature, in that a very thin film on the nanometer scale can be deposited on a 3D structure. In this work, we used SGC as a dopant source and FLA to demonstrate that highly activated junctions can be formed, and effective doping can be realized. Thus, this doping technique can be applied to advanced 3D devices, such as logic, memory and CMOS image sensor.