Evaluation of Ion Angle Deviation Caused by Outgassing during Ion Implantation

摘要

Outgassing is an unavoidable issue especially in high-energy ion implantation with photoresist masks. Under the outgassing, two phenomena affect the ion beam. One is the charge exchange induced by the interaction between ions and outgassing molecules or atoms. The other is ion scattering by nuclei in the outgassing molecules or atoms. We evaluated the effect caused by the second phenomenon and found that the scattering angle of the ion beam is significantly smaller compared to the Si <100> channeling critical angle.