Change of Depth Profile for High-Temperature Implantation in Channeling Condition

摘要

To manufacture high-performance electronic devices, implant parameters with high accuracies are desired. In recent years, higher accuracy of an implant angle is strongly required, with progress in shrinking and sophistication of devices. On the other hand, in some cases, ion implantations at high or low temperatures are performed to control implant damages, which are inevitably induced by the implantations. It was found that depth profiles of ions implanted in channeling conditions significantly change when wafer temperatures increase. In the channeling conditions, not only the implant angles, but also the wafer temperatures influence the depth profiles. Control of both the depth profile and the implant damage are inseparable in the channeling conditions, and careful setting of both the implant angle and the wafer temperature is critical to device design.