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Study on 3D stack package with anodic alumina substrate

机译:阳极氧化铝基板的3D堆叠封装的研究

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The need for 3D stack package is driven by rapidly developed integrated circuit and semiconductor industry. A 3D stack package with anodic alumina substrate was created for integration of multifunctional microsystems. The penetrating anodization of aluminum substrate was investigated. The stack and encapsulation model for COB (Chip on Board) was established with ANSYS. The encapsulating technology of the stacked module and laser ablation of interconnection between external leads in anodic alumina substrate and vertical bus plating on the faces of module were studied. The results show that 4 inches anodic alumina substrate with 0.1 mm thickness is achieved by 30 °C oxalic acid and 60 V voltages. The simulation results show that the maximal deformation of four layers COB structure with interlayer dam is 0.081 mm at 125 °C. The encapsulated solid state memory is 55% smaller and 40% lighter compared with similar 3D-plus memory.
机译:快速发展的集成电路和半导体行业推动了对3D堆栈封装的需求。创建了具有阳极氧化铝基板的3D堆栈封装,用于集成多功能微系统。研究了铝基板的渗透阳极氧化。利用ANSYS建立了COB(板载芯片)的堆栈和封装模型。研究了叠层模块的封装技术以及阳极氧化铝基板外部引线之间的互连与模块表面的垂直汇流排激光烧蚀。结果表明,通过30°C的草酸和60 V的电压可获得厚度为0.1 mm的4英寸阳极氧化铝基板。仿真结果表明,在125°C时,带夹层坝的四层COB结构的最大变形为0.081 mm。与类似的3D +内存相比,封装的固态内存小55%,重量轻40%。

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