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The Differentiating Correction Circuits in Complementary Buffer Amplifiers

机译:互补缓冲放大器中的微分校正电路

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_ It is shown that the performance of the ICs of complementary buffer amplifiers (BA) widely used as drivers of cable communication lines in devices of radio engineering and telecommunications is significantly influenced by parasitic capacitances (Cp1, Cp2) in the emitter circuits of the input voltage followers and reduced to the load capacitance Cp1(Cp2). This limits the maximum slew rate (SR), which becomes small at the BA low power consumption in the static mode. The authors propose a method for the SR increasing in the micro-power BAs by introducing special differentiating circuits into the BA classical scheme for the transient correction. It is established that the recommended options of differentiating capacitor connections allow the generation of additional recharge currents of parasitic capacitances Cp1(Cp2), thus improving the SR and reducing the transient time. The results of computer simulation of the BA for BJT of the complementary technological process of JCT “SPE Pulsar” (Moscow), and also on the transistors of the analogue array chip ABMK_1.7, show that the SR of complementary BA increases more than 10 times to 20000 V/°s (at a current of consumption Ip = 500 °A, including when operating in the low temperature range and exposure to radiation.
机译:_已证明,广泛用作无线电工程和电信设备中电缆通信线路驱动器的互补缓冲放大器(BA)的IC的性能受寄生电容(C p1 , C p2 )在输入电压跟随器的发射极电路中并减小到负载电容C p1 (C p2 )。这限制了最大压摆率(SR),该压摆率在静态模式下在BA低功耗时变得很小。通过将特殊的差分电路引入用于瞬态校正的BA经典方案中,作者提出了一种在微功率BA中增加SR的方法。可以确定,差分电容器连接的推荐选项允许产生寄生电容C的附加充电电流 p1 (C p2 ),从而改善了SR并减少了瞬态时间。 JCT“ SPE Pulsar”(莫斯科)的互补工艺的BJT BA的计算机仿真结果以及模拟阵列芯片ABMK_1.7的晶体管的计算机仿真结果表明,互补BA的SR增加超过10的最大电流为20000 V /°s(在消耗电流Ip = 500°A时,包括在低温范围内工作和暴露于辐射时)。

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