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The Differentiating Correction Circuits in Complementary Buffer Amplifiers

机译:互补缓冲放大器中的差分校正电路

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_ It is shown that the performance of the ICs of complementary buffer amplifiers (BA) widely used as drivers of cable communication lines in devices of radio engineering and telecommunications is significantly influenced by parasitic capacitances (Cp1, Cp2) in the emitter circuits of the input voltage followers and reduced to the load capacitance Cp1(Cp2). This limits the maximum slew rate (SR), which becomes small at the BA low power consumption in the static mode. The authors propose a method for the SR increasing in the micro-power BAs by introducing special differentiating circuits into the BA classical scheme for the transient correction. It is established that the recommended options of differentiating capacitor connections allow the generation of additional recharge currents of parasitic capacitances Cp1(Cp2), thus improving the SR and reducing the transient time. The results of computer simulation of the BA for BJT of the complementary technological process of JCT “SPE Pulsar” (Moscow), and also on the transistors of the analogue array chip ABMK_1.7, show that the SR of complementary BA increases more than 10 times to 20000 V/°s (at a current of consumption Ip = 500 °A, including when operating in the low temperature range and exposure to radiation.
机译:_结果表明,互补的缓冲放大器(BA)广泛用作无线电工程和电信设备的有线通信线路驱动器的IC的性能是通过显著寄生电容的影响(C P1 , C P2 )在输入电压跟随器的发射极电路和降低负载电容C P1 (C P2 )。这限制了最大压摆率(SR),其在静态模式中的BA低功耗变小。作者提出用于SR通过引入特殊的差分电路为用于过渡修正的BA经典方案在微功率的BA增加的方法。已经确定,微分电容器连接的建议的选项允许的寄生电容C的附加充电电流的产生 P1 (C P2 ),从而提高了SR和还原过渡时间。的BA为JCT“SPE脉冲星”的互补工艺流程的BJT(莫斯科),并且还对模拟阵列芯片ABMK_1.7的晶体管,显示的计算机仿真的结果的补充BA增加SR超过10倍〜20000 V /°S(在消费IP = 500℃A,的电流在低温度范围内并暴露于辐射操作时包括。

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