Development of 6.5kV 50A 4H-SiC JBS Diodes

摘要

A study of 6.5kV 50A JBS diodes based on 4H-SiC were reported. These high voltage SiC JBS diodes utilized 65 um thick n-type epi-layers with a doping concentration of 1 ×10¹⁵ cm^-3. The active area and total chip area of the JBS diodes were 75mm² and 110mm². Meanwhile, the FGR structure of 700um was applied for controlling the edge termination electrical fieldof the JBS diodes. The JBS diodes were able to support a blocking voltage of 6.5 kV with leakage current lower than 1.5uA. Under forward bias of 3.70V, the forward current of the JBS diodes could reach 50A at room temperature. Barrier height and ideality factor of the JBS diodes were extracted to be 1.26eV and 1.03. High temperature (425K) characteristics of the JBS diodes were also measured and analyzed.