3D MOS-transistor elements in smart-sensors based on SOI-structures

摘要

In this paper a modified design of the MOS-transistor in the smart-sensors based on SOI-structure is proposed, in which the surface of the subchannel region is made in the form of a cylinder segment oriented along the drain-source areas of the transistor. The dependence of the drain current of such a transistor reaches almost 10^-3μA/μm from the voltage at the outlet at different voltage values at the gate, which is an order of magnitude higher than for similar operating conditions of traditional MON-transistors.