Ensuring Charge Conservation in GaN HEMT Large Signal Model

摘要

In this paper an experiment has been carried out, in MATLAB, where measured S-parameters from a 10W MACOM wafer device have been fit using an equivalent circuit model. The extracted intrinsic element values aim to keep the modelled and measured results in good agreement with one another while ensuring capacitance values do not break the principles of charge conservation. The model has been verified using measured S-parameters taken over a wide bias plane as well as at frequencies ranging up to 10GHz. The results from our experiment shows an accurate intrinsic model with smooth realistic capacitances between the gate-source and gate-drain terminals while ensuring charge conservation.