Effects of uniaxial strain on gate capacitance and threshold voltage of double gate junctionless transistor

摘要

This work looks into the effects of uniaxial strain on the Silicon substrate of a Double Gate Junctionless Transistor (DGJLT) in terms of gate capacitance and threshold voltage extracted from Capacitance-Voltage (C- V) characteristics. The C- V curves had been obtained using a ID self consistent Schrodinger-Poisson solver incorporating wave function penetration effects. The contributions of effective mass variation and energy band splitting due to uniaxial strain had been incorporated in the simulation model. Thus the dependence of C- V characteristics on variation of strain levels had been revealed for up to 5 GPa. The effects of changes in channel thickness and doping density on C- V curves under uniaxial strain had also been studied. Finally, the threshold voltage variation with applied strain was observed.