C-V Characterization Technique for Four-Terminal GaN-on-Si HEMTs Based on 3-Port S-Parameter Measurements

摘要

This paper presents a low complexity measurement technique to characterize state-of-the-art GaN-on-Si HEMTs based on 3-port S-parameter measurements. The proposed measurement technique permits the C-V characterization of the six inter-electrode capacitances (CGS, CGD, CDS, CBS, CBG, CBD) inherent in a 4-terminal GaN-on-Si HEMT up to +-1 kV using a single low-budget test fixture. A-state-of-the-art GaN-on-Si power HEMT available in the market is used as DUT to validate the proposed measurement technique. Measurements show a good agreement with datasheet values and transistor model simulations.