C-V Characterization Technique for Four-Terminal GaN-on-Si HEMTs Based on 3-Port S-Parameter Measurements

摘要

This paper presents a low complexity measurement technique to characterize state-of-the-art GaN-on-Si HEMTs based on 3-port S-parameter measurements. The proposed measurement technique permits the C-V characterization of the six inter-electrode capacitances (C_(GS), C_(GD), C_(DS), C_(BS), C_(BG), C_(BD)) inherent in a 4-terminal GaN-on-Si HEMT up to ±1 kV using a single low-budget test fixture. A-state-of-the-art GaN-on-Si power HEMT available in the market is used as DUT to validate the proposed measurement technique. Measurements show a good agreement with datasheet values and transistor model simulations.