C-V Measurement under Different Frequencies and Pulse-mode Voltage Stress to Reveal Shallow and Deep Trap Effects of GaN HEMTs

摘要

In this work, the influence of interface traps at the Si₃N₄/ (GaN) / AlGaN interface and carbon-related buffer traps on AlGaN/GaN-on-silicon high electron mobility transistors (HEMTs) has been studied using high-frequency capacitance-voltage (HFCV) and quasi-static C- V (QSCV) measurement. The correlation between Ron degradation and two different traps distributions subjected to different operation conditions have been investigated. Deep-level traps from the hole-emission process of carbon-related buffer have been activated by high drain voltage under off-state in pulse-mode condition and shallow-level traps from interface states are observed with an increase in gate voltage under on-state.