Electrode material dependence of resistive switching behavior in Ta2O5resistive analog neuromorphic device

机译：Ta 2 O 5 电阻模拟神经形态装置中电阻切换行为的电极材料依赖性

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High-speed analog resistance switching characteristics were demonstrated in TiN/TaO x/ Ta₂O₅/TiN resistive analog neuromorphic device (RAND). An introduction of the TiN electrode smoothed the discontinuity in both the resistance switching processes by DC and pulse voltages. On the other hands, digital resistance switching was dominant in TiN/TaO_x/Ta₂O₅/Pt device. We deduce that the electrodes reactivity with oxygen plays a key role for the analog resistance switching.

机译：TiN / TaO x / Ta中展示了高速模拟电阻切换特性 _{2
Ø
_{5
/ TiN电阻模拟神经形态装置（RAND）。 TiN电极的引入通过直流电压和脉冲电压平滑了电阻切换过程中的不连续性。另一方面，数字电阻切换在TiN / TaO中占主导地位
_{x
/塔
_{2
Ø
_{5
/ Pt设备。我们推断出电极与氧气的反应性在模拟电阻转换中起着关键作用。}}}}}

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《IEEE Electron Devices Technology and Manufacturing Conference》|2018年|62-64|共3页
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Hisashi Shima; Makoto Takahashi; Yasuhisa Naitoh; Hiroyuki Akinaga;
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关键词
Resistance; Switches; Electrodes; Tin; Neuromorphics; Information processing; Resistive RAM;

机译：电阻;开关;电极;锡;神经形态;信息处理;电阻RAM;

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Electrode material dependence of resistive switching behavior in Ta2O5resistive analog neuromorphic device

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