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Bismuth-Based Transient Liquid Phase (TLP) Bonding as High-Temperature Lead-Free Solder Alternatives

机译:铋基瞬态液相(TLP)键合作为高温无铅焊料的替代品

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Predominant high melting point solders for high temperature electronics contain lead (Pb), which will soon be banned by environmental regulations as in most of consumer electronics. In an effort to replace the Pb-based solders with a new high-temperature capable material, we developed a transient liquid phase (TLP) bonding of bismuth (Bi) and nickel (Ni). A molten Bi (m.p. of 271°C) strongly reacts with Ni to form a BiNi or BiNi intermetallic layer, both of which can withstand over 400°C. To study microstructural developments and their influences on reliability performance, the die attached coupons were assembled using Bi-Ni TLP bonds. It was shown that BiNi is the first phase to form, after which the diffusion of Bi controls the growth kinetics of this intermetallic phase with the activation energy of 65.5 kJ/mol for the temperature range from 160 to 240°C. The solid-state transformation of BiNi to BiNi follows, which is a slower process and only occurs at a long-term aging (activation energy of 17.8 kJ/mol, for the temperature range from 260 to 300°C). When tested at high temperatures (up to 350°C) or exposed under long-term storage at 200°C over 1000 hours, such bonds showed no degradation in die shear strength. It indicates the potential of the Bi-Ni TLB bonds as a Pb-free alternative to replace high-Pb solders for high temperature electronics that operate at 200°C or higher.
机译:高温电子产品中主要的高熔点焊料包含铅(Pb),与大多数消费类电子产品一样,不久将受到环境法规的禁止。为了用一种新型的能耐高温的材料代替基于Pb的焊料,我们开发了铋(Bi)和镍(Ni)的瞬态液相(TLP)键合。熔融的Bi(熔点为271°C)与Ni强烈反应,形成BiNi或BiNi金属间化合物层,两者均可承受400°C以上的温度。为了研究微结构的发展及其对可靠性性能的影响,使用Bi-Ni TLP键组装了管芯附着试片。结果表明,BiNi是第一个形成的相,此后Bi的扩散控制了该金属间相的生长动力学,在160至240°C的温度范围内,其活化能为65.5 kJ / mol。随后发生从BiNi到BiNi的固态转变,这是一个较慢的过程,并且仅在长期老化(在260至300°C的温度范围内,活化能为17.8 kJ / mol)下发生。当在高温(最高350°C)下进行测试或在200°C下长期储存1000小时以上暴露时,这种粘结不会显示出模切剪切强度的下降。它表明了Bi-Ni TLB键作为无铅替代品的潜力,可以替代在200°C或更高温度下运行的高温电子产品中的高铅焊料。

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