首页> 外文会议>IEEE Electronic Components and Technology Conference >Warpage Modeling and Characterization of the Viscoelastic Relaxation for Cured Molding Process in Fan-Out Packages
【24h】

Warpage Modeling and Characterization of the Viscoelastic Relaxation for Cured Molding Process in Fan-Out Packages

机译:扇出型包装中固化成型过程的粘弹性松弛的翘曲建模和表征

获取原文

摘要

The viscoelastic behavior of the molding compound in fine pitch encapsulated electronic packages has a significant impact on component warpage and SMT assembly reliability. This is particularly true for the thin or ultra-thin (such as fan-out) packages used in mobile handsets and tablets, where process-induced warpage behavior is exacerbated by a larger molding volume and higher density of Cu trace layout. To ensure good assembly process yield and long term reliability, warpage relaxation during wafer molding process should be specially addressed and optimized with the effects of cure-dependent and time-domain viscoelastic relaxation from the molding material. In this paper, warpage evolution over the entire compression molding curing process, including compression molding cure (CMC) and the subsequent post molding cure (PMC), are characterized. An integrated process modeling approach using finite element (FE) method incorporated with the cure-dependent viscoelastic constitutive models of the molding material is successfully developed. The curing kinetics and viscoelastic behavior in the time domain of the molding material are characterized with differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA). Not only are the predicted warpage results based on the integrated process modeling approach in agreement with the in-line warpage measurement data, but this paper also finds that curing process conditions such as cure time, cure temperature, and curing stages can be used to tailor the warpage behaviors. The optimized curing conditions effectively improve the in-line warpage to enhance process yield and throughput.
机译:细间距封装的电子封装中模塑料的粘弹性行为对组件翘曲和SMT组装可靠性具有重大影响。对于手机和平板电脑中使用的薄或超薄(如扇出)封装,尤其如此,因为更大的成型量和更高的Cu迹线布局密度会加剧工艺引起的翘曲行为。为了确保良好的组装过程良率和长期可靠性,应特别考虑和优化晶片成型过程中的翘曲松弛,并从成型材料中获得依赖于固化和时域的粘弹性松弛的影响。在本文中,表征了整个压缩成型固化过程中的翘曲演变,包括压缩成型固化(CMC)和随后的后成型固化(PMC)。成功开发了一种使用有限元(FE)方法与成型材料的依赖于固化的粘弹性本构模型相结合的集成过程建模方法。通过差示扫描量热法(DSC)和动态力学分析(DMA)对成型材料在时域内的固化动力学和粘弹性行为进行了表征。不仅基于集成过程建模方法的预测翘曲结果与在线翘曲测量数据相符,而且本文还发现,可以使用固化工艺条件(例如固化时间,固化温度和固化阶段)来定制翘曲行为。优化的固化条件有效地改善了在线翘曲,从而提高了工艺产量和产量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号