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Strategies for reducing particle defects in ALD TiN and RFPVD Ti processes CFM: Contamination free manufacturing

机译:减少ALD TiN和RFPVD Ti工艺中颗粒缺陷的策略CFM:无污染的制造

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Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized for high IC yield. There are various causes for the generation of particle defects, depending upon semiconductor manufacturing processes. This work discusses various strategies, such as clean on go, idle paste, kit hardware selection that help to reduce the generation of defects in metal thin films processes, such as ALD TiN and RFPVD Ti. Using optimized periodic paste, ALD TiN particle failure rate was reduced from 20% to less than 5%. The median defect count was also reduced by half. It was also found that by implementing idle pasting, defect failure rate of RFPVD Ti processes can be reduced significantly. This work will also discuss hardware induced particle defect and solutions to reduce them.
机译:在半导体制造中不可避免地会产生颗粒缺陷,但必须将其最小化以实现高IC成品率。取决于半导体制造工艺,导致产生颗粒缺陷的原因多种多样。这项工作讨论了各种策略,例如清洗,闲置焊膏,套件硬件选择,这些方法有助于减少金属薄膜工艺(例如ALD TiN和RFPVD Ti)中缺陷的产生。使用优化的周期性浆料,ALD TiN颗粒的故障率从20%降低到了5%以下。中位数缺陷数也减少了一半。还发现通过实施闲置粘贴,可以显着降低RFPVD Ti工艺的缺陷失败率。这项工作还将讨论硬件引起的粒子缺陷及其解决方案。

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