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Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes
Methods of reducing defect formation on silicon dioxide formed by atomic layer deposition (ALD) processes
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机译:减少通过原子层沉积(ALD)工艺形成的二氧化硅上的缺陷形成的方法
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摘要
Methods for reducing and inhibiting defect formation on silicon dioxide formed by atomic layer deposition (ALD) are disclosed. Defect reduction is accomplished by performing processing on the silicon dioxide subsequent to deposition by ALD. The post-deposition processing may include at least one of a pump/purge cycle and a water exposure cycle performed after formation of the silicon dioxide on a substrate.
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