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An in-situ prepared synchronous self-compensated film strain gage for high temperature

机译:高温原位制备的同步自补偿薄膜应变计

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The strain of components at high temperature was usually measured by thin film strain gage prepared on the components. However, temperature effect caused by the thermal expansion coefficient mismatch between substrate and strain gage film usually induces the measurement error of metal film strain gage. This paper reports a novel temperature compensation method for in-situ prepared PdCr strain gage. A suspended PdCr film and PdCr film adherent to the substrate with the same layout were deposited, in which a suspended PdCr film was used for the temperature compensation system of PdCr film. The temperature coefficient of resistance (TCR) for the suspended PdCr film and PdCr film adherent to the substrate was measured up to 380°C. Meanwhile, the gage factor K for PdCr film has been calculated for different temperature.
机译:通常通过在组件上制备的薄膜应变计来测量组件在高温下的应变。但是,由于基板与应变计膜之间的热膨胀系数不匹配而引起的温度效应通常会引起金属膜应变计的测量误差。本文报道了一种原位制备的PdCr应变计的新型温度补偿方法。沉积悬浮的PdCr膜和附着在具有相同布局的基板上的PdCr膜,其中将悬浮的PdCr膜用于PdCr膜的温度补偿系统。测量了高达380°C的悬浮PdCr膜和粘附在基板上的PdCr膜的电阻温度系数(TCR)。同时,针对不同温度计算了PdCr膜的应变系数K。

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