Effects of electrode materials on the electrical and bending performance of memory thin film transistors Using P(VDF-TrFE) gate insulator and IGZO active channels

摘要

Demands for highly-fUnctional flexible nonvolatile memories are quite increasing to realize future flexible consumer electronic systems. We demonstrated and fabricated the ferroelectric-based memory thin-film transistors (Fe-MTFTs) on flexible poly(ethylene naphthalate) substrates using organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and oxide semiconductor amorphous In-Ga-Zn-O active channel. Memory operations and bending characteristics of the fabricated Fe-MTFTs could be far improved when the indium-tin oxide was replaced with Al gate electrodes owing to the plasma damage-free deposition process and mechanical ductility of Al electrode. As results, the ferroelectric-driven memory window as large as 10.1 V was obtained and sound nonvolatile memory operations was successfully confirmed even under the bending situation with an rc smaller than 4.0 mm.