Reliability analysis of memories suffering MBUs for the effect of negative bias temperature instability

摘要

In this paper, the effect of negative bias temperature instability (NBTI) on MBUs sensitivity of 65 nm bulk technology memories is analyzed and simulated by Geant4. A MTTF reliability model including NBTI stress time is proposed for memories protected by error correction codes (ECCs). Both cases of scrubbing and nonscrubbing are considered. By using the proposed model, the predicted MTTF results align well with the simulation MTTF results in the radiation environment.