Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver

机译：Intersil ISL70040SEH氮化镓（GaN）FET驱动器的总剂量和单事件效应测试

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We report the results of destructive and nondestructive single-event effects and total dose testing of the Intersil ISL70040SEH gallium nitride (GaN) FET driver, with a brief discussion of the part's functionality, electrical specifications and fabrication process.

机译：我们报告了Intersil ISL70040SEH氮化镓（GaN）FET驱动器的破坏性和非破坏性单事件效应以及总剂量测试的结果，并简要介绍了该器件的功能，电气规格和制造工艺。

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《European Conference on Radiation and Its Effects on Components and Systems》|2017年|1-5|共5页
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N. W. van Vonno; H. W. Satterfield; L. G. Pearce; F. C. Ballou; W. H. Newman; J. S. Gill; E. J. Thomson;
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Testing; Gallium nitride; Radiation effects; Performance evaluation; Field effect transistors; Logic gates; Voltage control;

机译：测试;氮化镓;辐射效应;性能评估;场效应晶体管;逻辑门;电压控制;

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机译：总电离剂量辐照对商业增强型AlGaN / GaN高电子迁移率晶体管单事件烧毁的影响
2. New 2D Structural Materials: Carbon–Gallium Nitride (CC–GaN) and Boron–Gallium Nitride (BN–GaN) Heterostructures—Materials Design Through Density Functional Theory [J] . Van W. Elloh, Abu Yaya, G. Gebreyesus, ACS Omega . 2019,第1期

机译：新型2D结构材料：碳氮化镓（CC-GaN）和硼氮化镓（BN-GaN）异质结构-通过密度泛函理论进行材料设计
3. Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs [J] . Fei Tan, Xia An, Shoubin Xue, Semiconductor science and technology . 2013,第5期

机译：垂直沟道双栅极nMOSFET中的总电离剂量和单事件效应
4. Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver [C] . N. W. van Vonno, H. W. Satterfield, L. G. Pearce, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：INTSIL ISL70040SH镓氮化镓（GaN）FET驱动器的总剂量和单事件效果测试
5. Distributed effects in power transistors and the optimization of the layouts of aluminum gallium nitride/gallium nitride HFETs. [D] . Lee, Sunyoung. 2006

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6. New Nitride Nanoceramics from Synthesis-Mixed Nanopowders in the Composite System Gallium Nitride GaN–Titanium Nitride TiN [O] . Mariusz Drygaś, Katarzyna Lejda, Jerzy F. Janik, 2021

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7. Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate [O] . Chu, Byung Hwan, Kang, Byoung Sam, Hung, Sheng Chun, 2010

机译：氮化铝镓（GaN）/ GaN高电子迁移率晶体管传感器，用于呼出气冷凝物中的葡萄糖检测

Total Dose and Single-Event Effects Testing of the Intersil ISL70040SEH Gallium Nitride (GaN) FET Driver

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