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DRIVER CIRCUIT FOR GALLIUM NITRIDE (GaN) HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFETs)
DRIVER CIRCUIT FOR GALLIUM NITRIDE (GaN) HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFETs)
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机译:氮化镓(GaN)异质结场效应晶体管(HFET)的驱动器电路
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摘要
A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.
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