Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)

摘要

We demonstrated the formation of ultra-shallow n+/p junctions in Si using an arsenic-doped Sol-Gel Coating (SGC) (Tokyo Ohka Kogyo Co., Ltd.) [1] and Flash Lamp Annealing (FLA). A high arsenic dopant concentration of 1.2×10 atoms/cm (Xj=9.0 nm, Rs= 1203 ohms/sq.) with a good junction profile (2.2 nm/decade) was realized with 1.4 ms FLA. These results indicate that this technique can be used for conformal doping of the Source/Drain Extensions (SDE) in sub-10 nm FinFETs fabricated using advanced 3D device engineering.