Design of a Novel Capacitorless DRAM Cell with Enhanced Retention Performance

机译：具有增强保留性能的新型电容器DRAM细胞的设计

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摘要

A novel capacitorless DRAM cell with enhanced retention performance is investigated. The write/read mechanisms, speed, retention performance are studied with numerical simulations. Further, the manufacturing method of this device is briefly discussed.

机译：研究了具有增强的保留性能的新型电容器DRAM细胞。使用数值模拟研究了写入/读取机制，速度，保留性能。此外，简要讨论该装置的制造方法。

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《IEEE Workshop on Microelectronics and Electron Devices》|2009年||共4页
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Peng-Fei Wang; Yi Gong; Shi-Jin Ding; David Wei Zhang; Shi-Li Zhang;
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原文格式 PDF
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中图分类 TN402-53;
关键词
Dynamic random access memory; Floating gate; Floating junction; Capacitorless; Retention;

机译：动态随机存取记忆;浮栅;浮动结;电容器;保留;

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1. Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless 1T DRAM Cell for Extended Retention Time at Low Latch Voltage [J] . Shin J. S., Choi H., Bae H., Electron Device Letters, IEEE . 2012,第2期

机译：垂直门Si / SiGe基于双HBT的无电容器1T DRAM单元，可在低锁存电压下延长保留时间
2. A Novel Capacitorless 1T DRAM Cell for Data Retention Time Improvement [J] . Lee W., Choi W. Y. Nanotechnology, IEEE Transactions on . 2011,第3期

机译：新型无电容1T DRAM单元，可改善数据保留时间
3. Novel Capacitorless DRAM Cell for Low Voltage Operation and Long Data Retention Time [J] . Woojun Lee, Woo Young Choi 電子情報通信学会技術研究報告 . 2009,第98期

机译：新型无电容DRAM单元，可实现低电压操作和较长的数据保留时间
4. Design of a Novel Capacitorless DRAM Cell with Enhanced Retention Performance [C] . Wang Peng-Fei, Gong Yi, Ding Shi-Jin, Microelectronics and Electron Devices, 2009. WMED 2009 . 2009

机译：具有增强的保留性能的新型无电容器DRAM单元的设计
5. Thin-Body SOI Capacitorless DRAM Cell Design Optimization and Scaling. [D] . Cho, Min Hee. 2012

机译：薄型SOI无电容器DRAM单元设计优化和扩展。
6. Retention-Aware DRAM Auto-Refresh Scheme for Energy and Performance Efficiency [O] . Wei-Kai Cheng, Po-Yuan Shen, Xin-Lun Li 2019

机译：具有保留功能的DRAM自动刷新方案可提高能源效率和性能
7. Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM with Grain Boundaries and Its Performances [O] . Sang Ho Lee, Won Douk Jang, Young Jun Yoon, 2021

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8. Single event mirroring and sense amplifier designs for enhanced SE tolerance of DRAMs [R] . Gulati, K., Massengill, L. W. 1994

机译：单事件镜像和读出放大器设计，可增强DRam的sE容差

Design of a Novel Capacitorless DRAM Cell with Enhanced Retention Performance

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