A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET

摘要

On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold swing roll-up ΔSS can be well controlled by the scaling theory. With its computational efficiency and simple form, the model can be easily used for the circuit application of the Elliptical GAA MOSFET.