Vertical power diodes based on bulk GaN substrates

摘要

In this work, study on electrical properties of vertical GaN power diodes, including schottky barrier diodes (SBD) and p-n diodes, are presented. The devices with various drift layer thickness and net carrier electron concentration were simulated using the Silvaco ATLAS TCAD software packages. What's more, an optimum design of vertical GaN devices with drift layer thickness 10μm and net carrier doping concentration 1 × 10¹⁶cm³were fabricated. These devices, including Schottky barrier diodes with a breakdown voltage of 2250 V and specific on-resistance of 0.9 mΩ·cm^-2, and p-n diode with a breakdown voltage of 2400 V and specific on-resistance of 0.85 mΩ·cm^-2, exhibited excellent electric properties.