METHOD FOR PREPARING LIGHT-EMITTING DIODE WITH VERTICAL STRUCTURE BY STRIPPING GAN BASE EPITAXIAL LAYER AND SAPPHIRE SUBSTRATE BY WET PROCESS

摘要

Provided are a method for preparing a light-emitting diode with a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process and a light-emitting diode with a vertical structure made using same. The method includes: preparing a graphical growth substrate, the growth substrate from bottom to top successively including a sapphire substrate (10), a second layer of easily corroded material with a high melting point (11), and a first layer of stable material with a high melting point (12), wherein the melting points of the first layer and the second layer of material with a high-melting point are greater than 900°C; growing a GaN base light-emitting diode epitaxial layer (20, 21) on the graphical growth substrate; successively forming a transparent and electrically conductive thin film (30), an omni-directional reflection layer (40), an electrically conductive reflection layer (50) and a passive metal protection layer (60) from bottom to top on the GaN base light-emitting diode epitaxial layer, and removing a portion of the GaN base epitaxial layer in the growth substrate and stripping the sapphire substrate by a wet process; and removing the first layer of stable material with a high melting point in the growth substrate by dry process etching, exposing an N-type GaN (20),and preparing an N electrode (110) on the N-type GaN. The method causes low damage to the epitaxial layer, and the performance of the light emitting diode made by this method is good.