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DC-contact, wide band, electrostatically actuated lateral RF MEMS switch for efficient signal switching

机译:直流接触,宽带,静电驱动的横向RF MEMS开关,可实现有效的信号切换

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This paper presents the design, simulation and characterization of a series-shunt RF microelectromechanical systems switch actuated by an electrostatic actuator. In this switch, two series switches are cascaded by a quarter wavelength section of transmission line suspended over the trench of the substrate to form a series-shunt configuration according to the principle of impedance transforming. The switch has three operating states of ON, OFF and Deep-OFF. The switch is normally OFF and two electro-static actuators are used in switch structure in order to drive the switch to ON or Deep-OFF states. The OFF state isolation of the switch is -40 up to 25 GHz. The insertion loss of the switch in the ON state is -0.6 dB at 20 GHz. The isolation is -80 dB at 5 GHz, -75 dB at 10 GHz and -65 dB at 20 GHz. The required actuation voltage for drive and actuate is 37 V. The switch transition time from OFF to ON state is 37 fis. The switch has potential applications in low power and high performance RF tuning and switching applications.
机译:本文介绍了由静电致动器驱动的串联分流射频微机电系统开关的设计,仿真和特性。在该开关中,两个串联开关通过悬挂在基板沟槽上方的传输线的四分之一波长段级联,从而根据阻抗变换的原理形成串联分流结构。开关具有ON,OFF和Deep-OFF三种操作状态。开关通常为OFF,并且在开关结构中使用了两个静电执行器,以将开关驱动到ON或Deep-OFF状态。开关的截止状态隔离度在-40 GHz(最高25 GHz)下为-40。处于ON状态的开关的插入损耗在20 GHz下为-0.6 dB。隔离度在5 GHz时为-80 dB,在10 GHz时为-75 dB,在20 GHz时为-65 dB。驱动和驱动所需的驱动电压为37V。从OFF到ON状态的开关转换时间为37 fis。该开关在低功率和高性能RF调谐和开关应用中具有潜在的应用。

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