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Morphology control in fullerene-based buffer layer by organic vapor phase deposition

机译:通过有机气相沉积控制富勒烯基缓冲层的形貌

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The morphology of small molecular weight organic thin film mixtures used in organic photovoltaics (OPV) is precisely controlled through growth conditions used in organic vapor phase deposition (OVPD). We found that the crystallinity of C60 in 3, 5, 3, 5-tetra(m-pyrid-3-yl)phenyl[1,1]biphenyl (BP4mPy):C60 buffer layers undergoes changes as a function of chamber growth pressure. The chamber growth pressure is optimized at 0.28 torr, resulting in the largest C60 crystalline domains. The power conversion efficiency of organic vapor phase deposited tetraphenyldibenzoperiflanthene (DBP):C70 planar mixed heterojunction OPVs using the optimized BP4mPy:C60 buffer layer is (8.0±0.2)% compared to (6.6±0.2)% using0 amorphous buffers grown by vacuum thermal evaporation.
机译:通过有机气相沉积(OVPD)中使用的生长条件,可以精确控制有机光伏(OPV)中使用的小分子量有机薄膜混合物的形态。我们发现,C60在3、5、3、5-四(间-吡啶-3-基)苯基[1,1]联苯(BP4mPy):C60缓冲层中的结晶度随腔室生长压力的变化而变化。将腔室生长压力优化为0.28托,从而获得最大的C60晶畴。使用优化的BP4mPy:C60缓冲层,有机气相沉积的四苯基二苯并环戊二烯(DBP):C70平面混合异质结OPV的功率转换效率为(8.0±0.2)%,而使用0通过真空热蒸发生长的非晶态缓冲剂的功率转换效率为(6.6±0.2)% 。

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