Evaluation of the infrared-ray sensors using poly-Si TFTs

摘要

We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination are much larger than the temperature dependences. Based on these results, we proposed three detection systems to proximity sense by the IR sensors using poly-Si TFTs.