Contamination control in a pulsed plasma doping tool

摘要

Pulsed plasma doping offers a number of compelling benefits for low energy implantation, such as throughput, simplicity and low risk to wafers. The compromise to plasmabased doping systems is the absence of mass selection and increased sensitivity to system contaminants. To quantify the level of contamination present, Secondary Ion Mass Spectroscopy (SIMS) measurements of boron and arsenic implantation for sub keV energies up to 5 keV will be presented. Preliminary data show the depth profile of contaminants is consistent with surface contamination from non-ionized sputtered material. Initial results for particulate contamination measurements will also be described.