PLASMA ION DOPING DEVICE AND THE PLASMA ION-DOPING METHOD FOR USING THE PROTECTION PULSE

摘要

PURPOSE: The plasma ion doping device and plasma ion-doping method prevent from the arcing generating in the processing chamber. The density of the plasma which becomes in the processing chamber is improved.;CONSTITUTION: The processing chamber(10) defines the space(11) shut tightly. The space shut tightly of the processing chamber is connected through the control valve(32) to the vacuum pump(34). The platen(12) has the conductivity plane for supporting the wafer(W). The injection pulse source(20) sanctions sound and meaning of a Chinese character pulse in platen.;COPYRIGHT KIPO 2011