Transformation of implantation induced interstitial point defects in dislocation loops

摘要

It was investigated the condition of the transformation of interstitial point defects in dislocations, dislocation loops by the method of molecular dynamics. Solid Al was taken as a basis of the investigation. Interstitial atoms were implanted in crystal by ion beam procedure. The energy of Implanted atom of this process was dissipated at the modelling block of the crystal. Interaction between atoms in the lattice was described by the pair interatomic potentials. Structural trsnsformation of the lattice was investigated at the different temperatures. Al and Ni were taken as the interstitial atoms. Structure-energetical transformations of the lattice near point Interstitial defects were connected with the formation of domains, divided by boundaries, which can be considered as erowdions at low temperature. The structure of the crystal was transformed with the appearance of dislocations or dislocation loops with the growth of temperature near pair of interstitial atoms.