Depth Profiling of N and C in Ion Implanted ZnO and SiUsing Deuterium Induced Nuclear Reaction Analysis

摘要

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogenand carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnOis 8 x 10~(14)ions cm~(-2). Raman measurements of the ion implanted samples showed three additional modes at 275, 504. and644 cm~(-1)compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the Nconcentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. Thedeuterium induced ~(12)C(d,p)~(13)C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It wasfound that the use of a large cold shield (liquid nitrogen trap) in the ion implanter chamber greatly reduces the amount ofcarbon impurity on the surface of ion implanted silicon. Various implantations with N_2, o_2,NO, NO_2and Pb ions wereperformed with and without cooling of the liquid nitrogen trap. Simultaneous detection of ppm-level concentrations of ~(16)O and ~(14)Nenables highly sensitive measurement of impurities that may be incorporated during the fabricationprocess, transport of the samples and/or storage of the samples in air.