Reliability Challenges with Self-Heating and Aging in FinFET Technology

摘要

The introduction of FinFET technology as an effective solution to continue technology scaling has pushed self-heating effects to the forefront of reliability challenges, especially at the 14nm technology node and below. Due to limited silicon volume for heat dissipation, elevated temperatures across the transistors channel can be generated during operation. This results in a considerable degradation of the key properties of transistors like decreased drain and increased leakage current. In addition, excessive temperatures considerably accelerate aging phenomena in transistors such as Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI), which shorten the lifetime of circuits. In this work, we discuss how self-heating effects in FinFET transistors can prolong the delay of circuits leading to reliability problems. We evaluate self-heating in an entire SRAM block consisting of SRAM cells, pre-charging circuit, sense amplifiers and an output latch. When it comes to reliability and lifetime, we demonstrate how self-heating effects can result in larger aging-induced degradations which, in turn, enforce designers to include wider and wider safety margins to sustain reliability. Lastly, we provide an outlook of self-heating and reliability concerns in Negative Capacitance Field Effect Transistors (NCFET).