New I-V Model For AlGaN/GaN HEMT At Large Gate Bias

摘要

Most theoretical I-V models appeared in the literature for AlGaN/GaN HEMTs fail to exactly fit the experimental data and a large deviation is reported, especially at large gate bias. Because the exact nature of the AlGaN/GaN hetrostructure is not fully described, we assume that there is a new phenomena in the device which causes this deviation. Here we compute this phenomena mathematically for doped and undoped devices using a new method. The model results will be useful in CAD programs to extract more accurate I-V characteristics for the AlGaN/GaN hetrostructure on sapphire substrate.