Power Loss Analysis of 60 V Trench Field-Plate MOSFETs utilizing Structure Based Capacitance Model for Automotive Application

摘要

We propose a structure based capacitance model for output capacitance (C_(oss)) and reverse transfer capacitance (C_(rss)) in 60-V class source-field-plate (SFP) and gate-field-plate (GFP) MOSFETs. C-V curves obtained by the model showed good agreement with TCAD simulation. Output charge (Q_(oss)), stored energy (E_(oss)) and turn-off waveforms also could be calculated very well. In assumption of 30 V, 70 A and 20 to 200 kHz switching operation, power losses related to the FP-MOSFET's features were estimated by utilizing the model. Moreover, we compared advantages of both FP-MOSFETs for several use conditions.