Analysis of Commercial Trench Power MOSFETs' Responses to ${rm Co}^{60}$ Irradiation

摘要

This paper presents a detailed analysis of commercial trench power MOSFET responses to ${rm Co}^{60}$ irradiation of all key d.c. electrical test parameters. Charge trapping in the gate oxide causes the threshold voltage $(V _{rm TH})$ to shift, which, in turn, accounts for most of the degradation exhibited by the device after irradiation.