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Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor

机译：半导体组件，沟槽结构晶体管，沟槽MOSFET，IGBT和场板晶体管

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摘要

A semiconductor component has a minimal size and area requirement. The semiconductor component is formed in a trench with wall regions and a bottom region. Terminal regions for the electrical connection of first and second contact regions (S, B) are formed at least partly within the trench (30).

机译：半导体组件具有最小的尺寸和面积要求。半导体部件形成在具有壁区域和底部区域的沟槽中。用于第一和第二接触区域（S，B）的电连接的端子区域至少部分地形成在沟槽（ 30 ）内。 展开▼

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公开/公告号US6882004B2

专利类型

公开/公告日2005-04-19

原文格式PDF

申请/专利权人 MARKUS ZUNDEL;FRANZ HIRLER;
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申请/专利号US20020282971

发明设计人 MARKUS ZUNDEL;FRANZ HIRLER;
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申请日2002-10-29

分类号H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;

国家 US

入库时间 2022-08-21 22:20:32

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1. 一种具有沟槽源极场板的Trench MOSFET晶体管及其制备方法 [P] . 中国专利： CN102856385A . 2013-01-02

2. 一种具有沟槽源极场板的Trench MOSFET晶体管 [P] . 中国专利： CN202758892U . 2013.02.27

3. Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor [P] . 美国专利： US2003080378A1 . 2003-05-01

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4. METHODS OF FORMING AN ISOLATION TRENCH IN A SEMICONDUCTOR, METHODS OF FORMING AN ISOLATION TRENCH IN A SURFACE OF A SILICON WAFER, METHODS OF FORMING AN ISOLATION TRENCH-ISOLATED TRANSISTOR, TRENCH-ISOLATED TRANSISTOR, TRENCH ISOLATION STRUCTURES FORMED IN A SEMICONDUCTOR, MEMORY CELLS AND DRAMS [P] . 美国专利： US6830977B1 . 2004-12-14

机译：在半导体中形成绝缘沟槽的方法，在硅晶片表面中形成绝缘沟槽的方法，在绝缘沟槽中形成绝缘沟槽的方法，在沟槽中绝缘的沟槽绝缘的晶体管的结构记忆体

5. Methods of forming an isolation trench in a semiconductor, methods of forming an isolation trench in a surface of a silicon wafer, methods of forming an isolation trench-isolated transistor, trench-isolated transistor, trench isolation structures formed in a semiconductor, memory cells and DRAMs [P] . 美国专利： US2002121673A1 . 2002-09-05

机译：在半导体中形成隔离沟槽的方法，在硅晶片的表面中形成隔离沟槽的方法，形成隔离沟槽隔离的晶体管的方法，沟槽隔离的晶体管，在半导体中形成的沟槽隔离结构，存储单元和记忆体

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