A 3.3 kV SiC MOSFET Half-Bridge Power Module

摘要

SiC MOSFET technology is rapidly progressing towards higher voltage ratings, with the potential to deliver a major impact on a number of society pivotal application domains, such as railway/naval traction, power distribution/transmission, renewable energies. Recently, 3.3 and 6.5 kV power MOSFETs with characteristics superior to counterpart Si IGBTs have been introduced [1]. This work presents the development of a half-bridge power module based on the 3.3 kV transistors. The design specifically addresses a number of aspects key to the development of SiC bespoke packaging solutions: device parallel performance; reliance on body-diode for freewheeling; high switching frequency capability; high dI/dt and high dV/dt compatible design by containment of parasitic inductance and, equally importantly, common mode capacitance. The validity of the proposed design is demonstrated in preliminary parametric switching tests.