A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process

摘要

This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel with base electrode and emitter electrode in each HBT. In order to enhance the protective ability, a layout of multiple emitter fingers shared with one common base are proposed. The TLP test results prove the ability of ESD protection.